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| 0.5- 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features * Low Noise Figure: 0.9 dB Typical at 4 GHz * High Associated Gain: 13.0 dB Typical at 4 GHz * High Output Power: 23.0 dBm Typical P 1 dB at 4 GHz * Hermetic Gold-Ceramic Microstrip Package housed in a hermetic, high reliability package. This device is designed for use in low noise or medium power amplifier applications in the 0.5-6 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 750 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 70 mil Package Description The ATF-21170 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 3 V, IDS = 20 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 80 -3.0 Min. Typ. Max. 0.6 0.9 1.2 16.0 13.0 10.0 23.0 13.0 120 120 -1.5 200 -0.8 1.1 GA Gain @ NFO: VDS = 3 V, IDS = 20 mA 12.0 P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression: VDS =5 V, IDS = 80 mA 1 dB Compressed Gain: VDS = 5 V, IDS = 80 mA Transconductance: VDS =3 V, VGS = 0 V Saturated Drain Current: VDS = 3 V, VGS = 0 V Pinch-off Voltage: VDS = 3 V, IDS = 1 mA 5965-8718E 5-46 ATF-21170 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Power Dissipation [2,3] Channel Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] + 7 -4 -8 IDSS 600 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 4 mW/C for TCASE > 25C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 250C/W; TCH = 150C 1 m Spot Size[4] 18 ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA Freq. GHz 0.5 1.0 2.0 4.0 8.0 NFO dB 0.4 0.5 0.6 0.9 1.2 opt Mag .93 .85 .70 .59 .54 Ang 17 35 70 148 -177 GA 15 RN/50 .90 .70 .46 .14 .09 NFO (dB) 2.0 1.5 1.0 0.5 0 1.0 NFO 12 9 6 2.0 4.0 6.0 8.0 FREQUENCY (GHz) ATF-21170 Typical Performance, TA = 25C 16 14 GA Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 3V, IDS = 20 mA, TA = 25C. 30 25 25 GA (dB) 20 12 10 MSG MSG 20 GAIN (dB) GAIN (dB) 15 MAG 15 |S21|2 MAG 1.5 10 |S21|2 NFO (dB) 1.0 0.5 0 0 10 20 NFO 10 5 0 0.5 5 30 IDS (mA) 40 50 60 0 0.5 1.0 2.0 4.0 6.0 8.0 10.0 1.0 2.0 4.0 6.0 8.0 10.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 3V, f = 4.0 GHz. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 3 V, IDS = 20 mA. Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 5 V, IDS = 80 mA. 5-47 GA (dB) Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 3 V, IDS = 20 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Mag. .96 .91 .82 .74 .70 .65 .64 .65 .66 .66 .67 S11 Ang. -31 -55 -95 -123 -147 -170 167 146 126 107 87 dB 15.5 14.2 12.1 10.2 8.8 7.3 6.3 5.4 4.5 3.4 2.2 S21 Mag. 5.93 5.14 4.05 3.23 2.74 2.33 2.07 1.86 1.67 1.48 1.29 Ang. 157 137 106 82 61 41 22 4 -13 -30 -47 dB -29.4 -24.3 -20.4 -19.5 -18.7 -18.2 -17.7 -17.5 -17.0 -16.6 -16.2 S12 Mag. .034 .061 .096 .106 .116 .123 .131 .134 .141 .148 .155 S22 Ang. 72 56 36 21 9 -1 -10 -17 -28 -39 -50 Mag. .46 .42 .39 .35 .33 .30 .29 .26 .26 .26 .25 Ang. -23 -42 -70 -91 -109 -127 -145 -167 164 140 114 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 5 V, IDS = 80 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 Mag. .95 .89 .78 .69 .64 .60 .61 .61 .63 .64 .64 S11 Ang. -43 -64 -106 -133 -160 175 154 136 120 102 86 dB 18.3 17.4 14.6 12.4 10.7 9.1 7.9 6.9 6.2 5.3 4.5 S21 Mag. 8.24 7.28 5.36 4.18 3.42 2.85 2.47 2.22 2.05 1.85 1.68 Ang. 149 133 101 79 56 37 18 2 -14 -32 -48 dB -32.4 -29.9 -25.2 -23.4 -22.7 -21.7 -20.4 -19.3 -17.9 -16.6 -15.3 S12 Mag. .024 .032 .055 .068 .073 .082 .095 .108 .127 .148 .172 S22 Ang. 67 59 44 34 31 24 19 12 7 0 -13 Mag. .49 .46 .40 .38 .36 .35 .33 .31 .27 .27 .29 Ang. -17 -26 -45 -60 -81 -100 -115 -132 -152 -179 165 A model for this device is available in the DEVICE MODELS section. 70 mil Package Dimensions .040 1.02 SOURCE 4 .020 .508 GATE 1 DRAIN 3 SOURCE 2 .004 .002 .10 .05 .070 1.70 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 5-48 |
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